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Download PDF by Peter W. Hawkes (ed.): Advances in Electronics and Electron Physics, Vol. 86

By Peter W. Hawkes (ed.)

ISBN-10: 0120147289

ISBN-13: 9780120147281

This sequence covers quite a lot of themes, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person parts of those tools to theoretical and sensible points of contemporary electroinics. one other huge intterest is electronic photograph processing and trend attractiveness, together with the units hired and the equipment constructed. Electron physics is interpreted very liberally and articles are usually incorporated on fabrics of present curiosity in addition to at the units that hire them. the article of the sequence is to supply articles which may evaluation a brand new or speedily constructing box, or could disguise decades of analysis, therefore offering a small monograph on a particular topic. "Advances in Electronics and Electron Physics" quantity 86 positive factors articles at the following issues: GaAs semiconductor thoughts; picture processing; N-beam calculators; and electron optics.

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Extra info for Advances in Electronics and Electron Physics, Vol. 86

Example text

Shifted logic levels are employed (0 C . Eflect of Transistor Gate Leakage When an access transistor is connected to the storage capacitor, additional leakage mechanisms are introduced that reduce the storage time of the cell, even when the access transistor is deliberately biased into the off state. These leakage mechanisms are illustrated in Fig. 27. The primary leakage mechanisms are subthreshold leakage of electrons from the source to the drain and leakage of electrons from the gate (or gate depletion region) to the drain.

Each cell in the memory compares its stored bit to the bit on its bit line. If any cell finds a mismatch, it pulls its associated match line to ground. Only if every bit in a word matches the input pattern will the associated match line remain high. Content addressable memories are useful in situations where large data bases are to be searched rapidly for specific patterns. The GaAs DCAM cell (Neudeck, 1991) is shown in Fig. 33. This cell consists of two JFET DRAM cells and four additional n-channel JFETs used to implement an exclusive-nor (XNOR) function.

If the structure is symmetrically doped ( N A i= NA2),the charge Qtota, divides equally between junctions 1 and 2. The instantaneous charge on each junction given by (32) can be related to an instantaneous value of depletion width using (28). Thus, combining (32) and (28), we can write for each junction that Q(t) Qtotai = -exp 2 (- t/z,) =qANB 2 ( W ( t )- 6) (41) Solving for W(t), W ( t ) = W,+-exp(-t/z,) Qtotai qANB Since the capacitance of the pnp structure is that of two junctions in series, we can write As can be seen from (43), the capacitance transient that occurs due to generation within the pn junction is not exponential, but rather the reciprocal of a constant plus an exponential.

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Advances in Electronics and Electron Physics, Vol. 86 by Peter W. Hawkes (ed.)


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